rev.1.00, aug.20.2004, page 1 of 6 FS7VS-12A high-speed switching use nch power mos fet rej03g0271-0100 under development rev.1.00 aug.20.2004 features ? drive voltage : 10 v ? v dss : 600 v ? r ds(on) (max) : 1.3 ? ? i d : 7 a outline 1 1. gate 2. drain 3. source 4. drain 3 2, 4 ldpak(s)-1 1 2 3 4 applications smps, lamp ballast, etc. maximum ratings (tc = 25c) parameter symbol ratings unit conditions drain-source voltage v dss 600 v v gs = 0 v gate-source voltage v gss 30 v v ds = 0 v drain current i d 7a drain current (pulsed) i dm 21 a avalanche current (pulsed) i da 7 a l = 200 h maximum power dissipation p d 100 w channel temperature tch ? 55 to +150 c storage temperature tstg ? 55 to +150 c mass ? 1.2 g typical value
FS7VS-12A rev.1.00, aug.20.2004, page 2 of 6 electrical characteristics (tch = 25c) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage v (br)dss 600 ? ? v i d = 1 ma, v gs = 0 v gate-source breakdown voltage v (br)gss 30 ? ? v i g = 100 a, v ds = 0 v gate-source leakage current i gss ?? 10 av gs = 25 v, v ds = 0 v drain-source leakage current i dss ?? 1mav ds = 600 v, v gs = 0 v gate-source threshold voltage v gs(th) 2.5 3.0 3.5 v i d = 1 ma, v ds = 10 v drain-source on-state resistance r ds(on) ?1.01.3 ? i d = 3 a, v gs = 10 v drain-source on-state voltage v ds(on) ?3.03.9 vi d = 3 a, v gs = 10 v forward transfer admittance | y fs |4.27.0? si d = 3 a, v ds = 10 v input capacitance ciss ? 1100 ? pf output capacitance coss ? 100 ? pf reverse transfer capacitance crss ? 25 ? pf v ds = 25 v, v gs = 10 v, f = 1mhz turn-on delay time t d(on) ?20?ns rise time t r ?25?ns turn-off delay time t d(off) ? 150 ? ns fall time t f ?35?ns v dd = 200 v, i d = 3 a, v gs = 10 v, r gen = r gs = 50 ? source-drain voltage v sd ?1.52.0 vi s = 3 a, v gs = 0 v thermal resistance rth(ch-c) ? ? 1.25 c/w channel to case
FS7VS-12A rev.1.00, aug.20.2004, page 3 of 6 performance curves drain power dissipation derating curve case temperature tc (c) drain power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds(on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds(on) ( ? ) 10 2 2 3 5 7 2 3 2 3 5 7 5 7 10 1 10 0 10 -1 tw =10 s 0 4 8 12 16 20 01020 50 40 30 23 57 3 57 10 1 10 0 210 2 357 210 3 100 s 1ms dc v gs = 20v,10v,8v 5v 4v 6v 5v 04812 v gs = 20v,10v, 8v,6v 16 20 0 2 4 6 8 10 p d = 100w p d = 100w 0 20 40 60 80 120 100 0 200 50 100 150 0 8 16 24 32 40 0481216 20 3a 7a 10a i d = 14a 0 0.4 0.8 1.2 1.6 2.0 20v 23 5710 0 10 -1 23 5710 1 23 5710 2 v gs = 10v tc = 25c single pulse tc = 25c pulse test tc = 25c pulse test tc = 25c pulse test tc = 25c pulse test
FS7VS-12A rev.1.00, aug.20.2004, page 4 of 6 transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs. drain current (typical) drain current i d (a) forward transfer admittance | y fs | (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance (pf) switching time (ns) gate-source voltage vs. gate charge (typical) gate charge qg (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) 10 4 2 3 5 7 2 3 2 3 5 7 5 7 10 3 10 2 10 1 0 4 8 12 16 20 0 4 8 12 16 20 23 5710 0 23 5710 1 10 -1 23 5710 0 23 5710 1 10 -1 5 7 5 3 2 7 5 3 2 10 2 10 1 td(off) tf tr td(on) 23 57 3 57 10 0 210 1 357 23 2 10 2 10 2 2 3 5 7 2 3 2 3 5 7 5 7 10 1 10 0 10 -1 200v 400v 0 4 8 12 16 20 0 20 40 60 80 100 0 0.8 1.6 2.4 3.2 4.0 0 4 8 12 16 20 v ds = 100v tc = 25c v ds = 10v pulse test v ds = 10v pulse test tc = 25c 75c 125c ciss coss crss tch = 25c f = 1mhz v gs = 0v tch = 25c, v dd = 200v v gs = 10v, r gen = r gs = 50 ? tch = 25c i d = 7a tc = 125c 75c 25c v gs = 0v pulse test
FS7VS-12A rev.1.00, aug.20.2004, page 5 of 6 channel temperature tch (c) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs(th) (v) channel temperature tch (c) breakdown voltage vs. channel temperature (typical) on-state resistance vs. channel temperature (typical) channel temperature tch (c) drain-source on-state resistance r ds(on) (tc) drain-source on-state resistance r ds(on) (25c) drain-source breakdown voltage v (br)dss (tc) drain-source breakdown voltage v ( br)dss (25c) transient thermal impedance characteristics pulse width tw (s) transient thermal impedance zth(ch-c) (c/w) switching time measurement circuit switching waveform ?50 100 050 150 ?50 100 050 150 ?50 100 0 50 150 10 1 7 5 3 2 7 5 3 2 10 0 10 ?1 0 1.0 2.0 3.0 4.0 5.0 0.4 0.6 0.8 1.0 1.2 1.4 10 1 10 ?1 23 5710 0 10 ?3 23 57 10 ?4 23 57 23 57 23 57 10 ?2 10 1 7 5 3 2 7 5 3 2 7 5 3 2 10 0 10 ?1 10 ?2 single pulse d = 1.0 0.2 0.5 0.02 0.05 0.1 t r t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10% t f vin monitor d.u.t. r l v dd vout monitor r gen r gs v gs = 10v i d = 3a pulse test v ds = 10v i d = 1ma v gs = 0v i d = 1ma
FS7VS-12A rev.1.00, aug.20.2004, page 6 of 6 package dimensions package code jedec jeita mass (reference value) ldpak (s)-(1) ? ? 1.30 g 10.2 0.3 1.37 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ? 0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ? 0.1 0.4 0.1 2.49 0.2 0.86 + 0.2 ? 0.1 2.54 0.5 2.54 0.5 1.3 0.2 3.0 + 0.3 ? 0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2003 unit: mm order code lead form standard packing quantity standard order code standard order code example surface-mounted type taping 1000 type name ? t +direction (1 or 2) +1 FS7VS-12A-t11 note : please confirm the specificat ion about the shipping in detail.
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